TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SRDA3.3 Series RoHS Pb GREEN SRDA3.3 Series 8pF 35A Diode Array Description The SRDA3.3 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect I/O pins against ESD and lightning induced surge events. This device can safely absorb up to 35A per IEC61000-4-5 (tp=8/20s) without performance degradation and a minimum 30kV ESD per IEC61000-4-2 international standard. Its low loading capacitance makes it ideal for high-speed interfaceprotection. Pinout Features Lightning protection, Low clamping voltage I/O 1 1 8 Ref 2 IEC61000-4-5, 35A Low leakage current (8/20s) 2 I/O 4 Ref 1 7 SOIC-8 surface mount EFT, IEC61000-4-4, 50A package (JEDEC MS-012) (5/50ns) 6 Ref 1 3 I/O 3 ESD, IEC61000-4-2, 4 5 Ref 2 30kV contact, 30kV air I/O 2 SOIC-8 (Top View) Note: Pinout diagrams above shown as device footprint on circuit board. Functional Block Diagram Applications Tertiary (IC Side) Video Line Protection Protection: Security Cameras I/O 1 Ref 1 I/O 2 - T1/E1/T3/E3 Storage DVRs - HDSL/SDSL Network Equipment - Ethernet Instrumentation, Medical RS232, RS485 Equipment Application Example R Tip I/O 4 Ref 2 I/O 3 R Ring 8 5 T1/E1/T3/E3 SRDA3.3-4 Transceiver 1 4 T Tip Life Support Note: T Ring Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. T1/E1/T3/E3 Interface Protection 2013 Littelfuse, Inc. 1 SRDA3.3 Series Speci cations are subject to change without notice. Revision: June 14, 2013 Please refer to www.littelfuse.com for current information. SRDA3.3 TVS Diode Arrays (SPA Diodes) Lightning Surge Protection- SRDA3.3 Series Absolute Maximum Ratings Thermal Information Parameter Rating Units Symbol Parameter Value Units SOIC Package 170 C/W P Peak Pulse Power (8/20s) 600 W pk Operating Temperature Range -40 to 125 C I Peak Pulse Current (8/20s) 35 A pp Storage Temperature Range -55 to 150 C T Operating Temperature -40 to 125 C op Maximum Junction Temperature 150 C T Storage Temperature -55 to 150 C STOR Maximum Lead Temperature (Soldering 260 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause 20-40s) (SOIC - Lead Tips Only) permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci cation is not implied. Electrical Characteristics (T = 25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Stand-Off Voltage V I 1A - - 3.3 V RWM T Reverse Breakdown Voltage V I =2uA 3.5 - - V BR T Snap Back Voltage V I =50mA 2.9 - - V SB T Reverse Leakage Current I V = 3.3V - - 1 A R R 1 Clamping Voltage, Line-Ground V I = 1A, t =8/20 s - 5.7 - V C PP p 1 Clamping Voltage, Line-Ground V I = 10A, t =8/20 s - 10.1 - V C PP p 1 Clamping Voltage, Line-Ground V I = 30A, t =8/20 s - 17.7 - V C PP p 1 Dynamic Resistance, Line-Ground R ( V -V )/(I -I ) - 0.5 - DYN C2 C1 PP2 PP1 IEC61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air Discharge) 30 - - kV C Reverse Bias=0V - 4.0 - pF I/O-I/O 1 Diode Capacitance C Reverse Bias=0V - 8.0 - pF I/O-GND 1 Parameter is guaranteed by design and/or device characterization. Normalized Capacitance vs. Bias Voltage Non-Repetitive Peak Pulse Power vs. Pulse Time 10 2.0 1.8 1.6 1.4 1 1.2 1.0 0.8 0.1 0.6 0.4 0.2 0.01 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 0.1 1 10 100 1000 Bias Voltage (V) Pulse Duration-t (S) p SRDA3.3 Series 2013 Littelfuse, Inc. 2 Speci cations are subject to change without notice. Revision: June 14, 2013 Please refer to