CPH3455 Power MOSFET 35V, 104m , 3A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 104m 10V Pb-Free, Halogen Free and RoHS compliance 173m 4.5V 35V 3A 208m 4V Typical Applications Load Switch Motor Drive ELECTRICAL CONNECTION N-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit Drain to Source Voltage V 35V DSS Gate to Source Voltage V 20 V GSS Drain Current (DC) I 3A D Drain Current (Pulse) I 12 A DP PW 10s, duty cycle 1% Power Dissipation When mounted on ceramic substrate P 1 W D PACKING TYPE : TL MARKING 2 (900mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not TL be assumed, damage may occur and reliability may be affected. 2 : This product is designed to ESD immunity<200V*, so please take care when handling. *Machine Model ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : June 2015 - Rev. 3 CPH3455/D LM LOTNo.CPH3455 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 35 V BR DSS D GS Zero-Gate Voltage Drain Current I V =35V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=1.5A 1.7 S FS DS D R (on)1 I =1.5A, V=10V 80 104m DS D GS Static Drain to Source On-State 123 173 R (on)2 I =0.75A, V =4.5V m DS D GS Resistance R (on)3 I =0.75A, V =4V 148 208 m DS D GS Input Capacitance Ciss 186 pF Output Capacitance Coss 36 pF V =20V, f=1MHz DS Reverse Transfer Capacitance Crss 22 pF Turn-ON Delay Time t (on) 4.2 ns d Rise Time t 4.7 ns r See specified Test Circuit Turn-OFF Delay Time 15 ns t (off) d Fall Time 5.7 ns t f Total Gate Charge Qg 4 nC Gate to Source Charge Qgs 0.9 nC V =20V, V =10V, I =3A DS GS D Gate to Drain Miller Charge Qgd 0.7 nC Forward Diode Voltage V SD I =3A, V=0V 0.86 1.2V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =15V DD V IN 10V I =1.5A D 0V R =10 L V V IN D OUT PW=10s D.C.1% G P.G 50 CPH3455 S www.onsemi.com 2