A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D V R Fast switching speed (BR)DSS DS(on) T = 25C A Green component and RoHS compliant (Note 1) 125m V = -10V -6.6A GS -60V 190m V = -4.5V -5.3A GS Mechanical Data Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. UL Description and Applications Flammability Classification Rating 94V-0 (Note 1) This new generation MOSFET has been designed to minimize the on- Moisture Sensitivity: Level 1 per J-STD-020D state resistance (R ) and yet maintain superior switching DS(on) Terminals Connections: See Diagram performance, making it ideal for high efficiency power management applications. Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.33 grams (approximate) DC-DC Converters Power management functions D D G D S GS Equivalent Circuit Top View Pin Out -Top View Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMP6A17KTC See Below 13 16 2,500 Note: 1. Diodes, Inc. defines Green products as those which are Eu RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMP = Product Type Marking Code, Line 1 ZXMP 6A17 = Product Type Marking Code, Line 2 6A17 YYWW = Date Code Marking YYWW YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 July 2009 ZXMP6A17K Diodes Incorporated www.diodes.com Document Revision: 2 A Product Line of Diodes Incorporated ZXMP6A17K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage V -60 V DSS Gate-Source voltage V 20 V GS (Note 3) 6.6 Continuous Drain current V = 10V T =70C (Note 3) I 5.3 A GS A D (Note 2) 4.4 Pulsed Drain current V = 10V (Note 4) I 20.3 A GS DM Continuous Source current (Body diode) (Note 3) I 9.3 A S Pulsed Source current (Body diode) (Note 4) I 20.3 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 4.17 (Note 2) 33.3 Power dissipation 9.25 W (Note 3) P D Linear derating factor 74.0 mW/C 2.11 (Note 5) 16.8 (Note 2) 30.0 Thermal Resistance, Junction to Ambient (Note 3) R 13.5 JA C/W (Note 5) 59.1 Thermal Resistance, Junction to Lead (Note 6) 2.41 R JL Operating and storage temperature range T , T -55 to 150 C J STG Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 July 2009 ZXMP6A17K Diodes Incorporated www.diodes.com Document Revision: 2