Product Information

D45C12G

D45C12G electronic component of ON Semiconductor

Datasheet
Trans GP BJT PNP 80V 4A 3-Pin(3+Tab) TO-220AB Rail

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

697: USD 0.6227 ea
Line Total: USD 434.02

0 - Global Stock
MOQ: 697  Multiples: 697
Pack Size: 697
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 697
Multiples : 697

Stock Image

D45C12G
ON Semiconductor

697 : USD 0.6227

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 154
Multiples : 1

Stock Image

D45C12G
ON Semiconductor

154 : USD 0.1964
500 : USD 0.1513
1000 : USD 0.145
2500 : USD 0.14

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Collector- Base Voltage Vcbo
Emitter- Base Voltage Vebo
Brand
Collector-Emitter Saturation Voltage
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Pd - Power Dissipation
Factory Pack Quantity :
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D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. D45C12 (PNP), D44C12 (NPN) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Max Unit DC Current Gain h FE (V = 1.0 Vdc, I = 0.2 Adc) CE C 40 120 (V = 1.0 Vdc, I = 1.0 Adc) CE C 20 (V = 1.0 Vdc, I = 2.0 Adc) CE C 20 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Cutoff Current (V = Rated V , V = 0) I 0.1 A CE CES BE CES Emitter Cutoff Current (V = 5.0 Vdc) I 10 A EB EBO ON CHARACTERISTICS CollectorEmitter Saturation Voltage (I = 1.0 Adc, I = 50 mAdc) V 0.1350.5Vdc C B CE(sat) BaseEmitter Saturation Voltage (I = 1.0 Adc, I = 100 mAdc) V 0.85 1.3 Vdc C B BE(sat) DYNAMIC CHARACTERISTICS Collector Capacitance (V = 10 Vdc, f = 1.0 MHz) C 125 pF CB cb Gain Bandwidth Product (I = 20 mA, V = 4.0 Vdc, f = 20 MHz) f 40 MHz C CE T SWITCHING TIMES Delay and Rise Times (I = 1.0 Adc, I = 0.1 Adc) t + t 50 75 ns C B1 d r Storage Time (I = 1.0 Adc, I = I = 0.1 Adc) t 350 550 ns C B1 B2 s Fall Time (I = 1.0 Adc, I = I = 0.1 Adc) t 50 75 ns C B1 B2 f ORDERING INFORMATION Device Package Shipping D45C12 TO220AB D45C12G TO220AB (Pb Free) 50 Units / Rail D44C12 TO220AB D44C12G TO220AB (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 200 10 1.0 s V = 1.0 Vdc 5.0 CE 10 s 3.0 T = 25C J 2.0 0.1 ms 100 dc 1.0 ms 1.0 90 80 0.5 70 0.3 60 0.2 T 70C C 50 0.1 DUTY CYCLE 50% 40 0.05 30 0.03 0.02 20 0.01 0.04 0.07 0.1 0.2 0.3 0.4 0.7 1.0 2.0 3.0 4.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I , COLLECTOR CURRENT (AMPS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Typical DC Current Gain Figure 2. Maximum Rated Forward Bias Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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