Product Information

DAN222T1G

DAN222T1G electronic component of ON Semiconductor

Datasheet
Diode Small Signal Switching 80V 0.1A 3-Pin SOT-416 T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.019 ea
Line Total: USD 57

29100 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1501 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

DAN222T1G
ON Semiconductor

1 : USD 0.0689
10 : USD 0.0648
25 : USD 0.0638
100 : USD 0.0384
250 : USD 0.0375
500 : USD 0.0375
1000 : USD 0.0375

29100 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

DAN222T1G
ON Semiconductor

3000 : USD 0.019
6000 : USD 0.0186
12000 : USD 0.0183
18000 : USD 0.018
24000 : USD 0.0176

3395 - WHS 3


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 10
Multiples : 10

Stock Image

DAN222T1G
ON Semiconductor

10 : USD 0.059
100 : USD 0.0476
300 : USD 0.0413
3000 : USD 0.0375
6000 : USD 0.0343
9000 : USD 0.0324

1501 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 358
Multiples : 1

Stock Image

DAN222T1G
ON Semiconductor

358 : USD 0.0375

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Operating Temperature Range
Factory Pack Quantity :
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DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT416/SC75 package which is designed DAN222, NSVDAN222 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 Adc R R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V I = 100 A 80 Vdc R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time t (Note 2) I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I 4.0 ns rr F R L rr R 2. t Test Circuit on following page. rr TYPICAL ELECTRICAL CHARACTERISTICS 10 100 T = 150C A T = 85C A T = 125C A 1.0 10 T = - 40C A T = 85C A 0.1 T = 55C 1.0 T = 25C A A 0.01 T = 25C A 0.1 0.001 50 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.0 0.9 0.8 0.7 0.6 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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