Ordering number : ENA0700 DBG150G SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode DBG150G 15A Single-Phase Bridge Rectifier Features Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : V =600V. RM Average output current : I =15A. O Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage V 600 V RM Tc=124C, with heatsink 15 A Average Output Current I O Ta=26C, without heatsink 3.6 A Surge Forward Current I 50Hz sine 1cycle peak value 200 A FSM Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Dilective Strength Voltage Vdis Terminals tc case, AC 1 minute 2.5 kV Tightening Torque TOR ( ): recommended value 0.8(0.5) Nm Electrical Characteristics at Ta=25C Per Constituent element of bridge. Ratings Parameter Symbol Conditions Unit min typ max Forward Voltage V I =7.5A 0.9 V F F Reverse Current I V =600V 10 A R R Thremal Resistance(Junction-Ambient) Rth(j-a) Without heatsink 25 C / W Thremal Resistance(Junction-Case) Rth(j-c) With heatsink 1 C / W Thremal Resistance(Junction-Lead) Rth(j-l) Without heatsink 5 C / W Marking: BG150G Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32207RB TI IM TC-00000583 No. A0700-1/3DBG150G Package Dimensions Electrical Connection unit : mm (typ) 7804-001 4.6 30.0 3.2 3.6 2.5 2.7 2.2 0.7 1.0 + - 10.0 7.5 7.5 I -- V I -- Tc F F O 2 20 100 7 5 SIN 3 15 2 10 7 5 10 3 2 1.0 7 5 5 3 2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 Forward Voltage, V -- V IT12119 Case Temperature, Tc -- C IT12120 F P -- I I -- n F O FSM 30 300 Tj=150C Tj=25C 50Hz 25 250 20 200 15 150 10 100 5 50 0 0 0 246180 121416 23527 3 5 7 1.0 10 100 Average Output Current, I -- A IT12121 Number of Cycles, n IT12122 O No. A0700-2/3 SIN Tc=150C 25C Forward Current, I -- A Average Forward Power Dissipation, P -- W F F 4.0 5.0 17.5 20.0 11.0 Peak Surge Forward Current, I -- A Average Output Current, I -- A FSM O