Product Information

DCF010-TL-E

DCF010-TL-E electronic component of ON Semiconductor

Datasheet
Silicon Epitaxial Planar Type (Anode Common)

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6411: USD 0.0656 ea
Line Total: USD 420.56

0 - Global Stock
MOQ: 6411  Multiples: 6411
Pack Size: 6411
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 6411
Multiples : 6411

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DCF010-TL-E
ON Semiconductor

6411 : USD 0.0656

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000

Stock Image

DCF010-TL-E
ON Semiconductor

3000 : USD 0.0755
45000 : USD 0.071
90000 : USD 0.071
135000 : USD 0.071

     
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RoHS - XON
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Ordering number:EN2789B DCF010 Silicon Epitaxial Planar Type (Anode Common) Ultrahigh-Speed Switching Diode Features Package Dimensions Ideally suited for use in hybrid ICs because of very unit:mm small-sized package. 1186A Fast switching speed. DCF010 Small interterminal capacitance. 1:Cathode1 2:Cathode2 3:Anode1, Anode2 Specifications SANYO:MCP Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni PVeak Reverse Voltage 8V5 RM RVeverse Voltage 8V0 R PIeak Forward Current Unit rating 3A00 m FM Total rating 4A50 m AIverage Rectified Current Unit rationg 1A00 m O Total tating 1A50 m SIurge Current (1s) Unit rating 4A FSM total rating 6A APllowable Power Dissipation 1W00 m Jjunction Temperature T 125 C Sgtorage Temperature Tst 55 to +125 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma FVorward Voltage I=11mA 0V.6 F1 F V I=410mA 0V.7 F2 F V I =100mA 1V.20 F3 F Reverse Current I V =30V 0A.1 R1 R I V =80V 0A.5 R2 R ICnterterminal Capacitance V =0V, f=1MHz 4F.0 p R Rreverse Recovery Time tIr =10mA, V =6V, R =50,0Irr=0.1Irp 4s. n F R L Reverse Recovery Time Test Circuit Electrical Connection (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)92995GI(KOTO)/5108TA, TS No.2789-1/2DCF010 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.2789-2/2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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