DTC113EET1G ON Semiconductor

DTC113EET1G electronic component of ON Semiconductor Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DTC113EET1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC113EET1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. DTC113EET1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: ON Semiconductor Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR
Datasheet: DTC113EET1G Datasheet (PDF)
Price (USD)
20000: USD 0.0235 ea
Line Total: USD 470 
Availability : 253170
  
Ship by Fri. 28 Nov to Thu. 04 Dec
QtyUnit Price
20000$ 0.0235
100000$ 0.0197

Availability 2461
Ship by Wed. 26 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2
10$ 0.12
100$ 0.075
500$ 0.0495
1000$ 0.0418
3000$ 0.033
6000$ 0.0297
9000$ 0.0242
24000$ 0.022


Availability 253170
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 20000
Multiples : 1
QtyUnit Price
20000$ 0.0235
100000$ 0.0197

   
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RoHS - XON
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We are delighted to provide the DTC113EET1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC113EET1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 k , R2 = 1 k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER both system cost and board space. (GROUND) Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M Reduces Component Count CASE 318D STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C SC75 Input Forward Voltage V 10 Vdc XX M CASE 463 IN(fwd) STYLE 1 Input Reverse Voltage V 10 Vdc IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2016 Rev. 4 DTC113E/DMUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2230T1G, SMUN2230T1G* 8G SC59 3000 / Tape & Reel (PbFree) MMUN2230LT1G, NSVMMUN2230LT1G* A8G SOT23 3000 / Tape & Reel (PbFree) MUN5230T1G 8G SC70/SOT323 3000 / Tape & Reel (PbFree) DTC113EET1G 7Q SC75 3000 / Tape & Reel (PbFree) DTC113EM3T5G, NSVDTC113EM3T5G* 7A SOT723 8000 / Tape & Reel (PbFree) NSBC113EF3T5G D (180)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable. ** (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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