ES1J ON Semiconductor

Fast Rectifiers ES1F-ES1J Features For Surface Mount Applications Glass Passivated Junction Low Profile Package www.onsemi.com Easy Pick and Place Built-in Strain Relief Superfast Recovery Times for High Efficiency 1 2 CATHODE ANODE ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Value SMA (DO214AC) Color Band Denotes Cathode ES1F ES1G ES1H ES1J Symbol Parameter Unit CASE 403AE V Maximum Repetitive 300 400 500 600 V RRM Reverse Voltage ORDERING INFORMATION I Average Rectified 1.0 A F(AV) Forward Current Device Package Shipping I Non-repetitive Peak 30 A FSM ES1F SMA 7500 / Forward Surge Current (PbFree) Tape & Reel 8.3 ms Single Half-Sine-Wave ES1G SMA 7500 / (JEDEC method) (PbFree) Tape & Reel T Operating Junction 55 to 150 C J ES1H SMA 7500 / Temperature Range (PbFree) Tape & Reel T Storage Temperature 55 to 150 C STG ES1J SMA 7500 / Range (PbFree) Tape & Reel P Power Dissipation 1.47 W D For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specification device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristics Value Unit R Thermal Resistance, JunctiontoAmbient (Note 1) 85 C/W JA R Thermal Resistance, JunctiontoCase (Note 1) 61 C/W JC C/W R Thermal Resistance, JunctiontoLead (Note 1) 35 JL 1. P. C. B mounted on 0.2 0.2 (5 5 mm) copper Pad Area. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise noted) C Value ES1F ES1G ES1H ES1J Symbol Characteristics Unit V Maximum Forward Voltage I = 1.0 A 1.3 1.7 V F F T Maximum Reverse Recovery Time, 35 ns rr I = 0.5 A, I = 1.0 A, I = 0.25 A F R RR I Maximum Reverse Current rated V A R R T = 25 C 5.0 A T = 100 C 100 A C Typical Junction Capacitance, V = 4.0 V, f = 1.0 MHz 10.0 8.0 pF j R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: August, 2020 Rev. 2 ES1J/DES1FES1J TYPICAL PERFORMANCE CHARACTERISTICS 1.2 30 8.3 ms Single Half Sine Wave (JEDEC Method) at T = 120C L 1.0 25 RESISTIVEOR 0.8 INDUCTIVELOAD 20 0.2 x 0.2 (5.0 x 5.0 mm) COPPERPADAREAS 0.6 15 0.4 10 5 0.2 1 0 80 90 100 110 120 130 140 150 1 10 100 Number of Cycles at 60 Hz Lead Temperature ( C) Figure 1. Maximum Forward Current Derating Figure 2. Maximum Non-repetitive Peak Forward Curve Surge Current 2.5 1000 100 2 T = 125C J T = 55CT = 40CT = 25C A A A 10 1.5 T = 85C J 1 1 T = 25C J 0.5 0.1 T = 85CT = 125CT = 150C A A A 0 0.01 0 20 40 60 80 100 120 140 0.01 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) I Forward Current (A) F Figure 3. Forward Current vs. Forward Voltage Figure 4. Typical Reverse Characteristics 14 Tj = 25C ES1FG 12 f = 1.0 MHz Vsig = 50 mVpp 10 ES1HJ 8.0 6.0 4.0 2.0 0 1 100 0 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance www.onsemi.com 2 Junction Capacitance (pF) Average Forward Current (A) V Forward Voltage (V) F Instantaneous Reverse Current ( A) Peak Forward Surge Current (A)