ESD7102, SZESD7102 ESD Protection Diodes Low Capacitance ESD Protection Diodes for High Speed Data Line The ESD7102 transient voltage suppressor is designed to protect www.onsemi.com high speed data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting MARKING voltage sensitive high speed data lines. The small form factor, DIAGRAM flowthrough style package allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between 3 high speed differential lines such as USB 3.0 and HDMI. SC75 E5 M CASE 463 2 Features 1 1 Low Capacitance (0.3 pF Typical, I/O to GND) Short to Battery Survivability E5 = Specific Device Code M = Date Code Protection for the Following IEC Standards: IEC 6100042 Level 4 (ESD) Low ESD Clamping Voltage (34 V Typical, +8 A TLP, I/O to GND) SZ Prefix for Automotive and Other Applications Requiring Unique PIN CONFIGURATION AND SCHEMATIC Site and Control Change Requirements AECQ101 Qualified and PPAP Capable Pin 1 Pin 2 These Devices are PbFree and are RoHS Compliant Typical Applications USB2.0/3.0 LVDS HDMI Pin 3 High Speed Differential Pairs MAXIMUM RATINGS (T = 25C unless otherwise noted) J = Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L ORDERING INFORMATION Maximum (10 Seconds) See detailed ordering, marking and shipping information in the IEC 6100042 Contact ESD 8 kV package dimensions section on page 5 of this data sheet. IEC 6100042 Air 15 ISO 10605 Contact (330 pF / 330 ) 8 ISO 10605 Contact (330 pF / 2 k ) 20 27 ISO 10605 Contact (150 pF / 2 k ) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2017 Rev. 1 ESD7102/DESD7102, SZESD7102 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 16 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 16.5 V BR T Reverse Leakage Current I V = 5 V, I/O Pin to GND 1 A R RWM Clamping Voltage (Note 1) V IEC6100042, 8 kV Contact See Figures 1 and 2 C Clamping Voltage TLP (Note 2) V I = 8 A 34 V C PP I = 16 A 55 PP I = 8 A 5.3 PP I = 16 A 10 PP Dynamic Resistance (Note 2) I TLP Pulse 1.5 R Junction Capacitance C VR = 0 V, f = 1 MHz between I/O Pins 0.2 0.4 pF J VR = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.5 Junction Capacitance Match C VR = 0 V, f = 1 MHz between I/O1 to GND and I/O 5 10 % J 2 to GND Insertion Loss f = 1 GHz 0.1 dB f = 3 GHz 0.2 3dB Bandwidth f R = 50 5 GHz BW L 1. For test procedure see Figures 5 and 6 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 120 20 100 0 80 20 60 40 40 60 20 80 0 100 20 120 25 0 25 50 75 100 125 150 175 25 0 25 50 75 100 125 150 175 TIME (ns) TIME (ns) Figure 1. IEC6100042 +8 kV Contact ESD Figure 2. IEC6100042 8 kV Contact ESD Clamping Voltage Clamping Voltage 1E02 0.50 1E03 0.45 1E04 0.40 1E05 0.35 1E06 0.30 1E07 0.25 1E08 0.20 1E09 0.15 1E10 0.10 1E11 0.05 1E12 0 2 0 2 46 8 10 12 14 16 18 20 2224 02 4 6 8 10 12 14 16 VOLTAGE (V) BIAS VOLTAGE (V) Figure 3. Typical IV Characteristic Curve Figure 4. Typical CV Characteristic Curve www.onsemi.com 2 CURRENT (A) VOLTAGE (V) CAPACITANCE (pF) VOLTAGE (V)