Product Information

ESD7124MUTBG

ESD7124MUTBG electronic component of ON Semiconductor

Datasheet
ON Semiconductor ESD Suppressors ESD PROTECTION FOR USB2.0

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8661 ea
Line Total: USD 0.87

717 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
523 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

ESD7124MUTBG
ON Semiconductor

1 : USD 0.8935
10 : USD 0.7786
100 : USD 0.552
500 : USD 0.475
1000 : USD 0.4244
3000 : USD 0.3703
9000 : USD 0.3692
24000 : USD 0.3657

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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ESD7124 4-Channel Low Capacitance Dual-Voltage ESD and Surge Protection Array Features ESD7124 PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS 4Channel, 6Lead, UDFN8 Package Top View Bottom View (Pins Down View) (Pins Up View) Pin Name Type Description 12 3 4 6 5 1 V HV V HV ESD Channel CC DD 2 CH1 I/O LV Lowcapacitance ESD Channel XX M 3 CH2 I/O LV Lowcapacitance ESD Channel Pin 1 Marking 4 CH3 I/O LV Lowcapacitance ESD Channel 5 GND Ground 65 1 2 3 4 6 GND Ground 6Lead UDFN SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Temperature Range 55 to +125 C Storage Temperature Range 65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. ELECTRICAL CHARACTERISTICS Reverse Working Breakdown Reverse Current Junction Capactance Voltage Voltage Vbr (V) Cj(pF) Leakage Ir ( A) Rdyn Vrwm (V) at 1 mA at Vrwm Vr = 0 V, f = 1 MHz Max Min Typ Max Typ Typ Max Device Name Pin2-4 (LV) 3.3 5.5 6.5 1 1 0.35 0.5 Pin1 (HV) 12 13.3 14 1 Clamping Voltage Vc (V) Max Ratings tp = 8 x 20 s tp = 8 x 20 s Ipp = 1 A Ipp = 16 A Ipp (A) Vc Max Ipp (V) Typ Typ Max Max Device Name Pin1 (HV) 15 16 100 27 Pin2-4 (LV) 9.5 Parameter Symbol Conditions Min Typ Max Unit Clamping Voltage V 16.8 V IEC 6100042 Level 2 equivalent C I = 8 A TLP (Note 1) PP (4 kV Contact, 4 kV Air) All Devices Pin2-4(LV) 24.9 See Figures 3 6 IEC 6100042 Level 4 equivalent I = 16 A PP (8 kV Contact, 15 kV Air) 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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