ESD7351, SZESD7351 Series ESD Protection Diode The ESD7351 Series is designed to protect voltage sensitive components that require ultra low capacitance from ESD and transient voltage events. Excellent clamping capability, low www.onsemi.com capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high MARKING DIAGRAMS frequency designs such as USB 2.0 high speed and antenna line applications. 2 SOD323 AF Features CASE 477 M 1 Low Capacitance (0.6 pF Max, I/O to GND) Low Clamping Voltage 2 Standoff Voltage: 3.3 V SOD523 AE CASE 502 Low Leakage 12 1 Response Time is < 1 ns Low Dynamic Resistance < 1 SOD923 AD M IEC6100042 Level 4 ESD Protection CASE 514AB SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and X, XX = Specific Device Code PPAP Capable M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PIN CONFIGURATION Typical Applications AND SCHEMATIC RF Signal ESD Protection RF Switching, PA, and Antenna ESD Protection Near Field Communications 1 2 Cathode Anode MAXIMUM RATINGS Rating Symbol Value Unit IEC 6100042 (ESD) Contact 20 kV Air 20 ORDERING INFORMATION See detailed ordering and shipping information in the package Total Power Dissipation on FR5 Board P 150 mW D dimensions section on page 5 of this data sheet. (Note 1) T = 25C A Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2018 Rev. 5 ESD7351/D MESD7351, SZESD7351 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.0 V BR T Reverse Leakage Current I V = 3.3 V < 1.0 50 nA R RWM Clamping Voltage (Note 3) V I = 1 A 8.0 V C PP Clamping Voltage (Note 3) V I = 3 A 10 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 0.43 0.6 pF J R V = 0 V, f < 1 GHz 0.43 0.6 R Dynamic Resistance R TLP Pulse 0.35 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A www.onsemi.com 2