L DATA SHEET www.onsemi.com MARKING ESD Protection Diodes DIAGRAMS Low Capacitance ESD Protection Diode PIN 1 for High Speed Data Line X3DFN2 M CASE 152AF ESD8351, SZESD8351 2 The ESD8351 Series ESD protection diodes are designed to protect SOD323 AE high speed data lines from ESD. Ultralow capacitance and low ESD CASE 477 M 1 clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. 2 SOD523 AF Features CASE 502 12 1 Low Capacitance (0.55 pF Max, I/O to GND) Protection for the Following IEC Standards: X, XX = Specific Device Code IEC 6100042 (Level 4) M = Date Code ISO 10605 Low ESD Clamping Voltage SZ Prefix for Automotive and Other Applications Requiring Unique PIN CONFIGURATION Site and Control Change Requirements AECQ101 Qualified and AND SCHEMATIC PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Cathode Anode Typical Applications USB 2.0 eSATA MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L ORDERING INFORMATION Maximum (10 Seconds) See detailed ordering and shipping information in the package IEC 6100042 Contact (ESD) ESD 15 kV dimensions section on page 6 of this data sheet. IEC 6100042 Air (ESD) ESD 15 kV ISO 10605 330 pF / 2 k Contact ESD 30 kV Maximum Peak Pulse Current I 5.0 A pp 8/20 s T = 25C A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 11 ESD8351/D M =ESD8351, SZESD8351 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter R V Working Peak Voltage DYN RWM I Maximum Reverse Leakage Current V R RWM V BR V V Breakdown Voltage I V V V BR T C RWM HOLD I V R C I Test Current I T T I V Holding Reverse Voltage HOLD HOLD I Holding Reverse Current HOLD R DYN R Dynamic Resistance DYN I PP I Maximum Peak Pulse Current PP V = V + (I * R ) C HOLD PP DYN V Clamping Voltage I C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 7.0 7.8 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 500 nA R RWM Holding Reverse Voltage V I/O Pin to GND 1.15 V HOLD Holding Reverse Current I I/O Pin to GND 20 mA HOLD Clamping Voltage V 6.5 V I = 8 A IEC 6100042 Level 2 equivalent C PP TLP (Note 2) (4 kV Contact, 4 kV Air) See Figures 1 through 11 I = 16 A 11.2 PP IEC 6100042 Level 4 equivalent (8 kV Contact, 15 kV Air) Clamping Voltage (Note 3) V 8.2 V C t = 8 x 20 s I = 5 A p PP Dynamic Resistance R Pin1 to Pin2 0.62 DYN Pin2 to Pin1 0.59 Junction Capacitance C V = 0 V, f = 1 MHz 0.55 pF J R ESD8351HT1G 0.40 ESD8351XV2TxG 0.40 ESD8351MUT5G 0.25 V = 0 V, f = 2.5 GHz 0.45 R ESD8351MUT5G 0.20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figures 8 and 9 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 3. Nonrepetitive current pulse at T = 20C, per IEC 6100045 waveform. A www.onsemi.com 2