DATA SHEET www.onsemi.com ESD Protection Diode UltraLow Capacitance MicroPackaged Diodes for ESD Protection ESD8472 MARKING The ESD8472 is designed to protect voltage sensitive components DIAGRAM that require ultra-low capacitance from ESD and transient voltage PIN 1 events. Excellent clamping capability, low capacitance, high X3DFN2 breakdown voltage, high linearity, low leakage, and fast response time 4 M CASE 152AF make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity 4 = Specific Device Code over voltage making it ideal for RF applications. This capacitance M = Date Code linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. ORDERING INFORMATION Features Device Package Shipping Industry Leading Capacitance Linearity Over Voltage ESD8472MUT5G X3DFN2 10000 / Tape & UltraLow Capacitance: 0.2 pF (PbFree) Reel Insertion Loss: 0.030 dBm SZESD8472MUT5G X3DFN2 15000 / Tape & Small Footprint: 0.62 mm x 0.32 mm (PbFree) Reel Standoff Voltage: 5.3 V For information on tape and reel specifications, Low Leakage: < 1 nA including part orientation and tape sizes, please Low Dynamic Resistance: < 1 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1000 ESD IEC6100042 Strikes 8 kV Contact / Air Discharged SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free and are RoHS Compliant Typical Applications RF Signal ESD Protection RF Switching, PA, and Antenna ESD Protection Near Field Communications USB 2.0, USB 3.0 MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit IEC 6100042 Level 4 (Contact) (Note 1) ESD 20 kV IEC 6100042 Level 4 (Air) (Note 1) 20 Maximum Peak Pulse Current I 2.4 A PP IEC 6100045 8/20 s (Lightning) (Note 2) Total Power Dissipation (Note 3) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient 400 C/W R JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 3. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2021 Rev. 11 ESD8472/DESD8472 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 5.3 V RWM Breakdown Voltage V I = 1 mA (Note 4) 7.0 12 V BR T Reverse Leakage Current I V = 5.3 V < 1 50 nA R RWM Clamping Voltage V I = 1 A (Note 5) 11 15 V C PP Clamping Voltage V I = 2.4 A (Note 5) 15 17.8 V C PP ESD Clamping Voltage V Per IEC6100042 See Figures 1 and 2 C Junction Capacitance C V = 0 V, f = 1 MHz 0.20 0.30 pF J R V = 0 V, f = 1 GHz 0.15 0.30 R Dynamic Resistance R TLP Pulse 1 DYN Insertion Loss f = 1 MHz 0.050 dB f = 8.5 GHz 0.250 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 5. Nonrepetitive current pulse at 25C, per IEC6100045 waveform (Figure 9). Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2