ESD9101 ESD Protection Diode Low Capacitance ESD Protection Diodes for High Speed Data Lines The ESD9101 is designed to protect a single high speed data line www.onsemi.com from ESD. Ultralow capacitance and low ESD clamping voltage via SCR technology make this device an ideal solution for protecting voltage sensitive high speed data lines. The SOD923 micopackage MARKING allows for easy PCB layout and the ability to be placed in space DIAGRAM constrained applications where board area comes at a premium. SOD923 Features X M CASE 514AB Low Capacitance (0.5 pF Max, I/O to GND) Protection for the Following Standards: XX = Specific Device Code IEC 6100042 (Level 4) & ISO 10605 M = Date Code = PbFree Package Low ESD Clamping Voltage (Note: Microdot may be in either location) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable PIN CONFIGURATIONS These Devices are PbFree, Halogen Free/BFR Free and are RoHS AND SCHEMATICS Compliant Cathode Typical Applications USB 3.0/3.1 HDMI 1.3/1.4/2.0 DisplayPort GPS Antenna Anode MAXIMUM RATINGS (T = 25C unless otherwise noted) Pin 1 J Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) Pins 2 IEC 6100042 Contact ESD 25 kV IEC 6100042 Air 25 ISO 10605 150 pF/2 k 30 ISO 10605 330 pF/2 k 30 20 ISO 10605 330 pF/330 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of ORDERING INFORMATION survivability specs. See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2017 Rev. 1 ESD9101/D =ESD9101 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter R V Working Peak Voltage DYN RWM I Maximum Reverse Leakage Current V R RWM V BR V V Breakdown Voltage I V V V BR T C RWM HOLD I V R C I Test Current I T T I V Holding Reverse Voltage HOLD HOLD I Holding Reverse Current HOLD R DYN R Dynamic Resistance DYN I PP I Maximum Peak Pulse Current PP V = V + (I * R ) C HOLD PP DYN V Clamping Voltage I C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 5.0 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.3 7.0 8.0 V BR T Reverse Leakage Current I V = 5.0 V, I/O Pin to GND 1.0 A R RWM Holding Reverse Voltage V I/O Pin to GND 2.2 V HOLD Holding Reverse Current I I/O Pin to GND 65 97 mA HOLD Clamping Voltage V IEC6100042, 8 KV Contact See Figures 1 and 2 V C Clamping Voltage TLP V I = 8 A 5.0 V C PP I = 8 A 4.0 PP I = 16 A 7.0 PP I = 16 A 7.0 PP Dynamic Resistance R I/O Pin to GND 0.30 DYN GND to I/O Pin 0.38 Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.36 0.50 pF J R V = 0 V, f = 2.5 GHz between I/O Pins and GND 0.36 0.45 R V = 0 V, f = 5.0 GHz between I/O Pins and GND 0.36 0.45 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 90 10 0 80 70 10 60 20 50 30 40 40 30 50 20 60 10 70 0 80 90 10 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. IEC6100042 +8 kV Contact ESD Figure 2. IEC6100042 8 kV Contact Clamping Voltage Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)