ESD Protection Diode MicroPackaged Diodes for ESD Protection ESD9C3.3ST5G SERIES The ESD9C3.3ST5G Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time make these parts ideal for ESD protection on designs www.onsemi.com where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power 12 supplies and many other portable applications. PIN 1. CATHODE Specification Features: 2. ANODE Low Capacitance 6.2 pF 13 pF Low Clamping Voltage MARKING Small Body Outline Dimensions: DIAGRAM 0.039 x 0.024 (1.0 mm x 0.60 mm) Low Body Height: 0.016 (0.40 mm) Max X M SOD923 Standoff Voltage: 3.3 V, 5 V CASE 514AB Low Leakage Response Time < 1 ns X = Specific Device Code ESD Rating of Class 3 (> 16 kV) per Human Body Model M = Date Code IEC6100042 Level 4 ESD Protection SZ Prefix for Automotive and Other Applications Requiring Unique ORDERING INFORMATION Site and Control Change Requirements AECQ101 Qualified and Device Package Shipping PPAP Capable These are PbFree Devices ESD9CxxST5G SOD923 8000/Tape & Reel (PbFree) SZESD9CxxST5G SOD923 8000/Tape & Reel MAXIMUM RATINGS (PbFree) Rating Symbol Value Unit For information on tape and reel specifications, IEC 6100042 (ESD) Contact 8.0 kV including part orientation and tape sizes, please Air 15 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Total Power Dissipation on FR5 Board P mW D (Note 1) T = 25C 150 A DEVICE MARKING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg Range See specific marking information in the device marking column of the table on page 2 of this data sheet. Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2020 Rev. 6 ESD9C3.3S/DESD9C3.3ST5G SERIES ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V V V V C BR RWM R RWM V I V R F V Breakdown Voltage I BR T I T I Test Current T I Forward Current F V Forward Voltage I F F P Peak Power Dissipation pk I PP C Max. Capacitance V = 0 and f = 1 MHz R *See Application Note AND8308/D for detailed explanations of UniDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.1 V Max. I = 10 mA) A F F I ( A) V (V) I C (pF) C (pF) R BR T V (V) V (Note 2) I (Note 3) (Note 3) V RWM RWM T C Device Marking Max Max Min mA Typ Max Per IEC6100042 (Note 4) Device ESD9C3.3ST5G R 3.3 1.0 5.0 1.0 12.8 13 Figures 1 and 2 See Below ESD9C5.0ST5G P 5.0 0.5 11.0 1.0 6.0 6.2 (Note 5) 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Capacitance at f = 1 MHz, V = 0 V, T = 25C. R A 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 5. ESD9C5.0ST5G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2