Product Information

FCA47N60F109

FCA47N60F109 electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 29.7A; 417W; TO3PN
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.8468 ea
Line Total: USD 10.85

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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FCA47N60F109
ON Semiconductor

1 : USD 10.8468
2 : USD 9.1122
5 : USD 8.6152
30 : USD 8.2371

Read More Specifications

     
Manufacturer
Product Category
Technology
Mounting
Case
Kind Of Package
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

The FCA47N60F109 is an insulated gate bipolar transistor (IGBT) from ON Semiconductor. It is a non-punch-through IGBT with a maximum blocking voltage of 600V, and rated for up to 5A collector current at 25°C ambient. This device features reduced gate charge, low on-state resistance, and a functioning temperature range of -55°C to +175°C. Special features include an NTC thermistor input, gate voltage protection, and integrated ESD protection. It is designed for use in induction heating, welding, power converters, motor control and UPS applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
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ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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