FCD260N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge V R MAX I MAX DSS DS(ON) D balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize 650 V 260 m 10 V 12 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET D Easy drive series helps manage EMI issues and allows for easier design implementation. Features G 700 V T = 150C J Typ. R = 222 m DS(on) S Ultra Low Gate Charge (Typ. Q = 24 nC) g POWER MOSFET Low Effective Output Capacitance (Typ. C = 248 pF) oss(eff.) 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant D Applications G Computing / Display Power Supplies S Telecom / Server Power Supplies DPAK CASE 369AS Industrial Power Supplies Lighting / Charger / Adapter MARKING DIAGRAM Y&Z&3&K FCD 260N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCD260N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 3 FCD260N65S3/DFCD260N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 12 A D C Continuous (T = 100C) 7.6 C I Drain Current Pulsed (Note 1) 30 A DM E Single Pulsed Avalanche Energy (Note 2) 57 mJ AS I Avalanche Current (Note 1) 2.3 A AS E Repetitive Avalanche Energy (Note 1) 0.9 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 90 W D C Derate Above 25C 0.72 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 2.3 A, R = 25 , starting T = 25C. AS G J 3. I 6 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 1.39 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 4) 40 JA 2 4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping FCD260N65S3 FCD260N65S3 DPAK 330 mm 16 mm 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2