FCH023N65S3L4 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 75 A, 23 m www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand new high V R MAX I MAX DSS DS(ON) D voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate 650 V 23 m 10 V 75 A charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and D withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features G S1: Driver Source 700 V T = 150C J S2: Power Source S1 S2 Typ. R = 19.5 m DS(on) POWER MOSFET Ultra Low Gate Charge (Typ. Q = 222 nC) g Low Effective Output Capacitance (Typ. C = 1980 pF) oss(eff.) 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications Telecom / Server Power Supplies D S2 Industrial Power Supplies S1 G UPS / Solar TO2474LD CASE 340CJ MARKING DIAGRAM Y&Z&3&K FCH023N65 S3L4 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCH023N65S3L4 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCH023N65S3L4/DFCH023N65S3L4 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 75 A D C Continuous (T = 100C) 65.8 C I Drain Current Pulsed (Note 1) 300 A DM E Single Pulsed Avalanche Energy (Note 2) 2025 mJ AS I Avalanche Current (Note 2) 15 A AS E Repetitive Avalanche Energy (Note 1) 5.95 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 595 W D C Derate Above 25C 4.76 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I = 15 A, R = 25 , starting T = 25C. AS G J 3. I 37.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH023N65S3L4 FCH023N65S3L4 TO247 A04 Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage V =0V, I = 1 mA, T =25 C 650 V DSS GS D J V =0V, I = 1 mA, T = 150 C 700 V GS D J BV / T Breakdown Voltage Temperature I = 1 mA, Referenced to 25 C 0.72 V/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 650 V, V =0V 1 A DSS DS GS V = 520 V, T = 125 C 6.8 DS C I Gate to Body Leakage Current V = 30 V, V =0V 100 nA GSS GS DS ON CHARACTERISTICS V Gate Threshold Voltage V =V , I = 3.0 mA 2.5 4.5 V GS(th) GS DS D R Static Drain to Source On Resistance V =10V, I = 37.5 A 19.5 23 m DS(on) GS D g Forward Transconductance V =20V, I = 37.5 A 66 S FS DS D www.onsemi.com 2