MOSFET N-Channel, SUPERFET II 800 V, 58 A, 60 m FCH060N80 Description www.onsemi.com SUPERFET II MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This technology is tailored to minimize 800 V 60 m 10 V 58 A conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, D server/telecom power, FPD TV power, ATX power and industrial power applications. Features G Typ. R = 54 m DS(on) 850 V T = 150C J S Ultra Low Gate Charge (Typ. Q = 270 nC) g Low E (Typ. 23 J 400 V) OSS POWER MOSFET Low Effective Output Capacitance (Typ. C = 981 pF) oss(eff.) 100% Avalanche Tested This Device is RoHS Compliant Applications ACDC Power Supply G D S LED Lighting TO2473LD CASE 340CH MARKING DIAGRAM Y&Z&3&K FCH060N80 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH060N80 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2020 Rev. 4 FCH060N80/DFCH060N80 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 800 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 58 A D C Continuous (T = 100C) 36.8 C I Drain Current Pulsed (Note 1) 174 A DM E Single Pulsed Avalanche Energy (Note 2) 2317 mJ AS I Avalanche Current (Note 1) 11.6 A AS E Repetitive Avalanche Energy (Note 1) 50 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 500 W D C Derate Above 25C 4 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering Purpose 300 C L 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I = 11.6 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 58 A, di/dt 200 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.25 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FCH060N80F155 FCH060N80 TO2473LD Tube N/A N/A 30 Units www.onsemi.com 2