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FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET December 2014 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 160 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 63 nC) g and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 178 pF) oss(eff.) to minimize conduction loss, provide superior switching perfor- 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. Consequently, An Integrated Gate Resistor SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET RoHS Compliant series. Noted by the part number suffix, this family helps manage EMI issues and allows for easier design implementa- Applications tion. For faster switching in applications where switching losses LCD / LED / PDP TV Lighting must be at an absolute minimum, please consider the Super- FET II MOSFET series. Solar Inverter AC-DC Power Supply D G G D G S D TO-220 TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP190N60E FCPF190N60E Unit V Drain to Source Voltage 600 V DSS - DC 20 V V Gate to Source Voltage GSS - AC (f > 1 Hz) 30 V o - Continuous (T = 25 C) 20.6 20.6* C I Drain Current A D o - Continuous (T = 100 C) 13.1 13.1* C I Drain Current - Pulsed (Note 1) 61.8 61.8* A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 208 39 W C P Power Dissipation D o o - Derate Above 25 C 1.67 0.31 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP190N60E FCPF190N60E Unit R Thermal Resistance, Junction to Case, Max. 0.6 3.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP190N60E / FCPF190N60E Rev. C11