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V = 10 V, I = 12.5 A DS(on) GS D generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Q = 57 nC) g employing a deep trench filling process that differentiates it from Low Effective Output Capacitance (Typ. C = 262 pF) oss(eff.) the conventional SJ MOSFETs. This advanced technology and 100% Avalanche Tested precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS RoHS Compliant MOSFET is suitable for high frequency switching power con- verter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Application Solar Inverter AC-DC Power Supply D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP25N60N F102 Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 25 C I Drain Current A D o - Continuous (T = 100 C) 16 C I Drain Current - Pulsed (Note 1) 75 A DM E Single Pulsed Avalanche Energy (Note 2) 861 mJ AS I Avalanche Current (Note 1) 8.3 A AR E Repetitive Avalanche Energy (Note 1) 2.2 mJ AR Peak Diode Recovery dv/dt (Note 3) 20 dv/dt V/ns MOSFET dv/dt 100 o (T = 25 C) 216 W C P Power Dissipation D o o - Derate Above 25C1.72W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FCP25N60N F102 Unit R Thermal Resistance, Junction to Case, Max. 0.58 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP25N60N Rev. C1