X-On Electronics has gained recognition as a prominent supplier of FCPF7N60NT MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCPF7N60NT MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCPF7N60NT ON Semiconductor

FCPF7N60NT electronic component of ON Semiconductor
FCPF7N60NT ON Semiconductor
FCPF7N60NT MOSFETs
FCPF7N60NT  Semiconductors

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See Product Specifications
Part No. FCPF7N60NT
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 600V N-Channel SupreMOS
Datasheet: FCPF7N60NT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Qg - Gate Charge
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We are delighted to provide the FCPF7N60NT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCPF7N60NT and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCPF7N60NT N-Channel SupreMOS MOSFET December 2013 FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Features Description The SupreMOS MOSFET is Fairchild Semiconductors next Typ R = 460m DS(on) generation of high voltage super-junction (SJ) technology em- Ultra Low Gate Charge (typ. Q = 17.8 nC) g ploying a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and pre- Low Effective Output Capacitance (typ. C = 91 pF) oss(eff.) cise process control provides lowest Rsp on-resistance, superior 100% Avalanche Tested switching performance and ruggedness. SupreMOS MOSFET is RoHS Compliant suitable for high frequency switching power converter applica- tions such as PFC, server/telecom power, FPD TV power, ATX Application power, and industrial power applications. Solar Inverter AC-DC Power Supply D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCPF7N60NT Units V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o -Continuous (T = 25 C) 6.8* C I Drain Current A D o -Continuous (T = 100 C) 4.3* C I Drain Current - Pulsed (Note 1) 20.4 A DM E Single Pulsed Avalanche Energy (Note 2) 79.4 mJ AS I Avalanche Current 6.8 A AR E Repetitive Avalanche Energy 0.6 mJ AR MOSFET dv/dt Ruggedness 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 4.9 V/ns o (T = 25 C) 30.5 W C P Power Dissipation D o o - Derate above 25C0.24W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCPF7N60NT Units R Thermal Resistance, Junction to Case, Max. 4.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCPF7N60NT Rev. C2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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