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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDA16N50 F109 N-Channel UniFET MOSFET June 2014 FDA16N50 F109 TM N-Channel UniFET MOSFET 500V, 16.5 A, 380 m Features Description TM R = 380 m (Max.) V = 10, I = 8.3 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to LowC (Typ. 20 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. PDPTV Uninterruptible Power Supply D G G D TO-3PN S S o T = 25 C unless otherwise noted. Absolute Maximum Ratings C Symbol Parameter FDA16N50 F109 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 16.5 A D C - Continuous (T = 100C) 9.9 A C (Note 1) I Drain Current - Pulsed 66 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 780 mJ AS I Avalanche Current (Note 1) 16.5 A AR E Repetitive Avalanche Energy (Note 1) 20.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 205 W D C - Derate above 25C 2.1 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA16N50 F109 Unit R Thermal Resistance, Junction-to-Case, Max. 0.6 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 40 JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDA16N50 F109 Rev. C2