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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDA18N50 N-Channel UniFET MOSFET June 2014 FDA18N50 TM N-Channel UniFET MOSFET 500 V, 19 A, 265 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 265 m (Max.) V = 10 V, I = 9.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to LowC (Typ. 25 pF) provide better switching performance and higher avalanche rss energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. PDPTV Uninterruptible Power Supply AC-DC Power Supply D G G D TO-3PN S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDA18N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 19 A D C - Continuous (T = 100C) 11.4 A C (Note 1) I Drain Current - Pulsed 76 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 945 mJ AS I Avalanche Current (Note 1) 19 A AR E Repetitive Avalanche Energy (Note 1) 23 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 239 W D C - Derate above 25C 1.92 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA18N50 Unit R Thermal Resistance, Junction-to-Case, Max. 0.52 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 40 JA 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDA18N50 Rev. C2