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FDB0165N807L N-Channel PowerTrench MOSFET December 2015 FDB0165N807L N-Channel PowerTrench MOSFET 80 V, 310 A, 1.6 m Features General Description This N-Channel MOSFET is produced using Fairchild Max r = 1.6 m at V = 10 V, I = 36 A DS(on) GS D Semiconductors advance PowerTrench process that has Fast Switching Speed been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching Low Gate Charge performance for industrial applications. High Performance Trench Technology for Extremely Low Applications r DS(on) Industrial Motor Drive High Power and Current Handling Capability Industrial Power Supply RoHS Compliant Industrial Automation Battery Operated Tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch D(Pin4, tab) 1. Gate 4 2. Source/Kelvin Sense 3. Source/Kelvin Sense 4. Drain 5. Source 6. Source G 1 7. Source 2 3 (Pin1) 5 6 7 D2-PAK S(Pin2,3,5,6,7) (TO263) MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25C (Note 5) 310 C I -Continuous T = 100C (Note 5) 220 A D C -Pulsed (Note 4) 1780 E Single Pulse Avalanche Energy (Note 3) 1083 mJ AS Power Dissipation T = 25C 300 C P W D Power Dissipation T = 25C (Note 1a) 3.8 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 0.5 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB0165N807L FDB0165N807L D2-PAK-7L 330mm 24mm 800 units 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB0165N807L Rev.C