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FDB0300N1007L N-Channel PowerTrench MOSFET March 2016 FDB0300N1007L N-Channel PowerTrench MOSFET 100 V, 200 A, 3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max r = 3 m at V = 10 V, I = 26 A DS(on) GS D Semiconductors advance PowerTrench process that has Max r = 4.5 m at V = 6 V, I = 20 A been especially tailored to minimize the on-state resistance DS(on) GS D while maintaining superior ruggedness and switching Fast Switching Speed performance for industrial applications. Low Gate Charge Applications High Performance Trench Technology for Extremely Low Industrial Motor Drive R DS(on) Industrial Power Supply High Power and Current Handling Capability Industrial Automation RoHS Compliant Battery Operated tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch D(Pin4, tab) 1. Gate 4 2. Source/Kelvin Sense 3. Source/Kelvin Sense 4. Drain 5. Source 6. Source G 1 7. Source 2 3 (Pin1) 5 6 7 D2-PAK S(Pin2,3,5,6,7) (TO263) MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25C (Note 5) 200 C I -Continuous T = 100C (Note 5) 140 A D C -Pulsed (Note 4) 1090 E Single Pulse Avalanche Energy (Note 3) 843 mJ AS Power Dissipation T = 25C 250 C P W D Power Dissipation T = 25C (Note 1a) 3.8 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 0.6 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB0300N1007L FDB0300N1007L D2-PAK-7L 330 mm 24 mm 800 units 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB0300N1007L Rev.C1