FDB3632 ON Semiconductor

FDB3632 electronic component of ON Semiconductor
FDB3632 ON Semiconductor
FDB3632 MOSFETs
FDB3632  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDB3632 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB3632 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDB3632
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Datasheet: FDB3632 Datasheet (PDF)
Price (USD)
800: USD 1.75 ea
Line Total: USD 1400 
Availability : 776
  
Ship by Tue. 12 Aug to Mon. 18 Aug
QtyUnit Price
800$ 1.75
1600$ 1.725
3200$ 1.7125
6400$ 1.7

Availability 776
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.75
1600$ 1.725
3200$ 1.7125
6400$ 1.7


Availability 3880
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.9375
1600$ 1.925
2400$ 1.9


Availability 776
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 2.0859


Availability 5432
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.8801


Availability 705
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 57
Multiples : 1
QtyUnit Price
57$ 4.5734
78$ 3.3501
84$ 3.107
109$ 2.3985
250$ 2.2825
500$ 1.8975

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDB3632 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB3632 and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, N-Channel, POWERTRENCH 100 V, 80 A, 9 m FDH3632, FDP3632, FDB3632 www.onsemi.com Features R = 7.5 m (Typ.), V = 10 V, I = 80 A DS(ON) GS D Q (tot) = 84 nC (Typ.), V = 10 V g GS V R MAX I MAX DSS DS(ON) D Low Miller Charge 100 V 9 m 80 A Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are PbFree and are RoHS Compliant Applications G Synchronous Rectification Battery Protection Circuit S Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter TO2473 CASE 340CK G D S TO2203 CASE 340AT G D S D2PAK3 CASE 418AJ MARKING DIAGRAM Y&Z&3&K FDX3632 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDX3632 = Specific Device Code X = H/P/B ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2020 Rev. 5 FDP3632/DFDH3632, FDP3632, FDB3632 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS I Drain Current A Continuous (T < 111C, V = 10 V) 80 D C GS Continuous (T = 25C, V = 10 V, 12 amb GS R = 43C/W) JA I Drain Current Pulsed Figure 4 A D E Single Pulse Avalanche Energy (Note 1) 337 mJ AS P Power Dissipation (T = 25C) 310 W D C Derate Above 25C 2.07 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C, L = 0.12mH, I = 75 A, V = 80 V. J AS DD THERMAL CHARACTERISTICS Symbol Parameter Value Unit 2 R Thermal Resistance, Junction to Case, Max. TO220, D PAK, TO247 0.48 C/W JC R Thermal Resistance, Junction to Ambient, Max. TO220 (Note 2) 62 C/W JA 2 2 R Thermal Resistance, Junction to Ambient, D PAK, Max. 1 in copper pad area 43 C/W JA R Thermal Resistance, Junction to Ambient, Max. TO247 (Note 2) 30 C/W JA 2. Pulse Width = 100 s PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 2 FDB3632 FDB3632 D PAK 330 mm 24 mm 800 Units FDP3632 FDP3632 TO220 Tube N/A 50 Units FDH3632 FDH3632 TO247 Tube N/A 30 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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