FDD6685 30 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON www.onsemi.com Semiconductors advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V 2 5V). S Features G 40 A, 30 V R = 20 m V = 10 V DS(ON) GS R = 30 m V = 4.5 V DS(ON) GS Fast Switching Speed High Performance Trench Technology for Extremely Low R DS(ON) D High Power and Current Handling Capability Qualified to AEC Q101 This Device is PbFree and are RoHS Compliant D G S DPAK3 (TO252 3 LD) CASE 369AS MARKING DIAGRAM Y&Z&3&K FDD 6685 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDD6685 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: April, 2018 Rev. 3 FDD6685/DFDD6685 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) A Symbol Parameter Ratings Units V DrainSource Voltage 30 V DSS V GateSource Voltage 25 V GSS I Continuous Drain Current A T = 25C (Note 5) 40 D C T = 25C (Note 3a) 11 A Pulsed, PW 100 s (Note 3b) 100 P Power Dissipation for Single Operation (Note 3) 52 W D (Note 3a) 3.8 (Note 3b) 1.6 T , T Operating and Storage Junction Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoCase (Note 3) 2.9 C/W JC R Thermal Resistance, JunctiontoAmbient (Note 3a) 40 C/W JA R Thermal Resistance, JunctiontoAmbient (Note 3b) 96 C/W JA 1. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at