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FDD86326 N-Channel Shielded Gate PowerTrench MOSFET March 2015 FDD86326 N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductors advanced PowerTrench process that Max r = 23 m at V = 10 V, I = 8 A DS(on) GS D incorporates Shielded Gate technology. This process has been optimized for r , switching performance and ruggedness. Max r = 37 m at V = 6 V, I = 4.6 A DS(on) DS(on) GS D High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used Application surface mount package DC - DC Conversion Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 37 C I -Continuous T = 25 C (Note 1a) 8 A D A -Pulsed 40 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25 C 62 C P W D Power Dissipation T = 25 C (Note 1a) 3.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.0 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86326 FDD86326 D-PAK(TO-252) 13 16 mm 2500 units 1 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FDD86326 Rev.1.3