MOSFET - P-Channel, PowerTrench , Logic Level -40 V, -25 A, 21 m FDD9511L-F085 Features www.onsemi.com Typ r = 17 m at V = 10 V I = 25 A DS(on) GS D Typ Q = 17 nC at V = 10 V I = 25 A g(tot) GS D UIS Capability D Qualified to AEC Q101 G These Devices are PbFree and are RoHS Compliant S DPAK Applications TO252 Automotive Engine Control CASE 369AS Powertrain Management Solenoid and Motor Drivers D Electrical Power Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems G ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) J S Rating Symbol Value Unit Drain to Source Voltage V 40 V DSS ORDERING INFORMATION Gate to Source Voltage V 16 V GS See detailed ordering and shipping information on page 2 of this data sheet. Drain Current Continuous I 25 A D (V = 10 V) (T = 25C) (Note 1) GS C Pulsed Drain Current (T = 25C) I See A C D Figure 4 Single Pulse Avalanche Energy (Note 2) E 25 mJ AS Power Dissipation P 48.4 W D Derate above 25C P 0.32 W/C D Operating and Storage Temperature T , T 55 to C J STG Range +175 Thermal Resistance (Junction to Case) R 3.1 C/W JC Maximum Thermal Resistance R 52 C/W JA (Junction to Ambient) (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by wirebond configuration 2. Starting Tj = 25C, L = 0.08 mH, I = 25 A, V = 40 V during inductor AS DD charging and V = 0 V during time in avalanche DD 3. R is the sum of the junctiontocase and casetoambient thermal JA resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC JA is determined by the users board design. The maximum rating presented 2 here is based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: November, 2020 Rev. 0 FDD9511LF085/DFDD9511LF085 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FDD9511LF085 FDD9511L DPAK (TO252) 13 12 mm 2500 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage V =0V, I = 250 A 40 V DSS GS D I Drain to Source Leakage Current V = 40 V, T =25 C 1 A DSS DS J V =0V GS 1 mA T = 175 C (Note 4) J I Gate to Source Leakage Current V = 16 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V =V , I = 250 A 1 1.8 3 V GS(th) GS DS D R Drain to Source OnResistance V = 4.5 V, I = 12.5 A, T =25 C 24 32 m DS(on) GS D J V = 10 V, T =25 C 17 21 m GS J I = 25 A D T = 175 C (Note 4) 28 36 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V, f = 100 KHz 1200 pF iss DS GS C Output Capacitance 480 pF oss C Reverse Transfer Capacitance 27 pF rss R Gate Resistance V = 0.5 V, f = 1 MHz 38 g GS Q Total Gate Charge V = 20 V, V = 0 V to 10 V 17 23 nC g(tot) DD GS I = 25 A D Q Total Gate Charge V = 0 V to 4.5 V 8 nC g(4.5) GS Q Threshold Gate Charge V = 0 V to 1V 1 nC g(th) GS Q Gate to Source Gate Charge V = 20 V, I = 25 A 4 nC gs DD D Q Gate to Drain Miller Charge 2.5 nC gd SWITCHING CHARACTERISTICS t Turn-On Time V = 20 V, I = 25 A, 45 ns DD D on V = 10 V, R =6 GS GEN t Turn-On Delay Time 7 ns d(on) t Turn-On Rise Time 24 ns r t Turn-Off Delay Time 120 ns d(off) t Turn-Off Fall Time 40 ns f t Turn-Off Time 235 ns off DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Voltage V =0V, I = 25 A 0.95 1.25 V SD GS SD V =0V, I = 12.5 A 0.9 1.2 V GS SD T Reverse Recovery Time I = 25 A, dI /dt = 100 A/ s 36 54 ns rr F SD Q Reverse Recovery Charge 22 33 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2