Product Information

FDG327NZ

FDG327NZ electronic component of ON Semiconductor

Datasheet
MOSFET 20V N-Ch PowerTrench

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

Stock Image

FDG327NZ
ON Semiconductor

3000 : USD 0.2383
N/A

Obsolete
0 - WHS 2

MOQ : 1231
Multiples : 1

Stock Image

FDG327NZ
ON Semiconductor

1231 : USD 0.2568
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

FDG327NZ
ON Semiconductor

1 : USD 1.7502
10 : USD 0.833
100 : USD 0.4287
500 : USD 0.3656
1000 : USD 0.32
3000 : USD 0.2868
6000 : USD 0.2765
9000 : USD 0.2693
24000 : USD 0.2609
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000

Stock Image

FDG327NZ
ON Semiconductor

3000 : USD 0.2062
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Product
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDG327NZ FDG327NZ 20V N-Channel PowerTrench MOSFET Features General Description 1.5 A, 20 V. R = 90 m V = 4.5 V. DS(ON) GS This N-Channel MOSFET has been designed R = 100 m V = 2.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 140 m V = 1.8 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized use Fast switching speed in small switching regulators, providing an extremely low R and gate charge (Q ) in a small package. DS(ON) G Low gate charge Applications High performance trench technology for extremely DC/DC converter low R DS(ON) Power management High power and current handling capability. Load switch S D D G D Pin 1 D SC70-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage GSS 8 I Drain Current Continuous (Note 1a) 1.5 A D Pulsed 6 P Power Dissipation for Single Operation (Note 1a) 0.42 W D (Note 1b) 0.38 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 300 RJA C/W R Thermal Resistance, Junction-to-Ambient (Note 1b) 333 JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .37 FDG327NZ 7 8mm 3000 units 2008 Semiconductor Components Industries, LLC. Publiaction Order Number: September-2017, Rev. 2 FDG327NZ/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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