MOSFET N-Channel, POWERTRENCH 150 V, 167 A, 5.9 m FDH055N15A Description www.onsemi.com This NChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been tai lored tominimize the on state resistance while maintaining superior V R MAX I MAX DS DS(ON) D switching performance. 150 V 5.9 m 10 V 167 A Features R = 4.8 m (Typ.) V = 10 V, I = 120 A DS(on) GS D Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability This Device is PbFree and is RoHS Compliant Applications N-CHANNEL MOSFET Synchronous Rectification for ATX / Sever / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter G D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FDH 055N15A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDH055N15A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: April, 2021 Rev. 4 FDH055N15A/DFDH055N15A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FDH055N15A Unit V Drain to Source Voltage 150 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C, Silicon Limited) 167 A D C (Note 1) Continuous (T = 100C, Silicon Limited) 118 C Continuous (T = 25C, Package Limited) 156 C I Drain Current Pulsed (Note 2) 668 A DM E Single Pulsed Avalanche Energy (Note 3) 835 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 4) 6.0 V/ns P Power Dissipation (T = 25C) 429 W D C Derate above 25C 2.86 W/C T , T Operating and Storage Temperature Range 55 to + 175 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156 A. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. Starting T = 25C, L = 3 mH, I = 23.6 A J AS 4. I 120 A, di/dt 200 A/s, V BV , Starting T = 25 C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter FDH055N15A Unit R Thermal Resistance, Junction to Case, Max. 0.35 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FDH055N15A FDH055N15A TO2473LD Tube N/A N/A 30 Units www.onsemi.com 2