FDG6317NZ MOSFET Dual, N-Channel, POWERTRENCH 20 V, 2.1 A, 550 m General Description www.onsemi.com This dual NChannel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either V R MAX I MAX DSS DS(ON) D synchronous or conventional switching PWM controllers. It has been 20 V 550 m 2.1 A optimized use in small switching regulators, providing an extremely Iow R and gate charge (QG) in a small package. DS(ON) Features 0.7 A, 20 V R = 400 m V = 4.5 V DS(ON) GS R = 550 m V = 2.5 V DS(ON) GS GateSource Zener for ESD ruggedness Low Gate Charge High Performance Trench Technology for Extremely Low R DS(ON) Compact Industry Standard SC706 Surface Mount Package These Devices are PbFree and are RoHS Compliant D G Applications D DC/DC Converter D Power Management G S Load Switch Pin 1 SC706 MAXIMUM RATINGS (T = 25C unless otherwise noted) A CASE 419B Symbol Parameter Ratings Units MARKING DIAGRAM V DrainSource Voltage 20 V DSS V GateSource Voltage 12 V GSS &E&E&E& I Drain Current: A D &Y Continuous (Note1) 0.7 &.67&G Pulsed 2.1 P Power Dissipation for Single 0.3 W D Operation &Y = Data Code T , T Operating and Storage Junction 55 to +150 C &.67&G = Specific Device Code J STG Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 2 of assumed, damage may occur and reliability may be affected. this data sheet. THERMAL CHARACTERISTICS Symbol Parameter FDG6317NZ Unit R Thermal Resistance, Junction to Ambient, (Note 1) 415 C/W JA 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. R = 415 C/W when JC JA JA mounted on a minimum pad. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev.2 FDG6317NZ/DFDG6317NZ PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Reel Size Tape Width Quantity .67 FDG6317NZ 7 8 mm 3000 units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage V =0V, I = 250 A 20 V DSS GS D BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25 C 13 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V =16V, V =0V 1 A DSS DS GS I GateBody Leakage V = 12 V, V =0V 10 A GSS GS DS I GateBody Leakage V = 4.5 V, V =0V 1 A GSS GS DS ON CHARACTERISTICS V Gate Threshold Voltage V =V , I = 250 A 0.6 1.2 1.5 V GS(th) DS GS D V / T Gate Threshold Voltage I = 250 A, Referenced to 25 C 2 mV/ C GS(th) J D Temperature Coefficient R Static DrainSource V = 4.5 V, I = 0.7 A 300 400 m DS(on) GS D OnResistance V = 2.5 V, I = 0.6 A 450 550 GS D V = 4.5 V, I = 0.7 A, T = 125 C 390 560 GS D J I OnState Drain Current V =10V, V =0V 1 A D(on) GS DS g Forward Transconductance V =20V, I =5A 1.8 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V =10V, V = 0 V, f = 1.0 MHz 66.5 pF iss DS GS C Output Capacitance 19 pF oss C Reverse Transfer Capacitance 10 pF rss(eff.) R Gate Resistance V = 15 mV, f = 1.0 MHz 5.8 G GS SWITCHING CHARACTERISTICS t Turn-On Delay Time V =10V, I =1A, 5.5 11 ns d(on) DD D V = 4.5 V, R =6 GS GEN t Turn-On Rise Time 7 15 ns r t Turn-Off Delay Time 7.5 15 ns d(off) t Turn-Off Fall Time 2.5 5 ns f Q Total Gate Charge V =10V, I = 0.7 A, 0.76 1.1 nC g DS D V = 4.5 V, GS Q GateSource Charge 0.18 nC gs Q GateDrain Charge 0.20 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Source to Drain Diode Forward Current 0.25 A S V Source to Drain Diode Forward V =0V, I = 0.25 A (Note 2) 0.8 1.2 V SD GS S Voltage t Diode Reverse Recovery Time I = 0.7 A, dI /dt = 100 A/ s 8.3 nS rr F F Q Diode Reverse Recovery Charge 1.2 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2