ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDG8842CZ Complementary PowerTrench MOSFET FDG8842CZ Complementary PowerTrench MOSFET Q1:30V,0.75A,0.4 Q2:25V,0.41A,1.1 Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field Max r = 0.4 at V = 4.5V, I = 0.75A effect transistors are produced using ON Semiconductors DS(on) GS D proprietary, high cell density, DMOS technology. This very Max r = 0.5 at V = 2.7V, I = 0.67A DS(on) GS D high density process is especially tailored to minimize Q2: P-Channel on-state resistance. This device has been designed Max r = 1.1 at V = 4.5V, I = 0.41A DS(on) GS D especially for low voltage applica-tions as a replacement for bipolar digital transistors and small signal MOSFETs. Since Max r = 1.5 at V = 2.7V, I = 0.25A DS(on) GS D bias resistors are not required, this dual digital FET can replace Very low level gate drive requirements allowing direct several different digital transistors, with different bias resistor operation in 3V circuits(V <1.5V) GS(th) values. Very small package outline SC70-6 RoHS Compliant S2 G2 Q1 S1 D1 D1 G1 G2 D2 G1 Q2 D2 S2 S1 SC70-6 Pin 1 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 25 V DS V Gate to Source Voltage 12 8 V GS Drain Current -Continuous 0.75 0.41 I A D -Pulsed 2.2 1.2 0.36 Power Dissipation for Single Operation (Note 1a) P W D (Note 1b) 0.30 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 JA C/W R Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415 JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .42 FDG8842CZ 7 8mm 3000 units 1 2007 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev.2 FDG8842CZ/D