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FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench MOSFET June 2014 FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 m : Features General Description Max r = 23 m : at V = 4.5 V, I = 9.5 A This Single N-Channel MOSFET has been designed using DS(on) GS D Fairchild Semiconductors advanced Power Trench process to Max r = 29 m : at V = 2.5 V, I = 8.0 A DS(on) GS D optimize the r V = 1.5 V on special MicroFET DS(ON) GS Max r = 36 m : at V = 1.8 V, I = 4.0 A leadframe. DS(on) GS D Max r = 50 m : at V = 1.5 V, I = 2.0 A DS(on) GS D Applications HBM ESD protection level > 2.5 kV (Note 3) Li-lon Battery Pack Low Profile-0.8 mm maximum in the new package MicroFET Baseband Switch 2x2 mm Load Switch Free from halogenated compounds and antimony oxides DC-DC Conversion RoHS Compliant Pin 1 G D D Bottom Drain Contact D 1 6 D Drain Source D 2 5 D 3 4 G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 8 V GS -Continuous T = 25 C (Note 1a) 9.5 A I A D -Pulsed 24 Power Dissipation T = 25 C (Note 1a) 2.4 A P W D Power Dissipation T = 25 C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 T JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 410 FDMA410NZ MicroFET 2X2 7 8 mm 3000 units 1 www.fairchildsemi.com 2009Fairchild Semiconductor Corporation FDMA410NZ Rev.B4