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FDMC8321L N-Channel PowerTrench MOSFET February 2013 FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 m Features General Description Max r = 2.5 m at V = 10 V, I = 22 A DS(on) GS D This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max r = 4.1 m at V = 4.5 V, I = 18 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r DS(on) convertional switching PWM contollers. It has been optimized for and hign efficiency low gate charge, low r , fast switching speed body diode DS(on) reverse recovery performance. Next Generation enhanced body diode technology, engineered for soft recovery Applications 100% UIL tested Synchronous rectifier RoHS Compliant Load switch/Orring Motor switch Bottom Top Pin 1 S S D S S G S D S D D D D G D D Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 49 C I -Continuous T = 25 C (Note 1a) 22 A D A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 86 mJ AS Power Dissipation T = 25 C 40 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 3.1 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8321L FDMC8321L Power33 13 12 mm 3000 units 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC8321L Rev .C2