FDMD8630 MOSFET N-Channel, POWERTRENCH , Dual 30 V, 167 A, 1.0 m General Description www.onsemi.com This package integrates two N Channel devices connected internally in commonsource configuration. This enables very low package parasitics and optimized thermal path to the common source Top Bottom pad on the bottom. Provides a very small footprint (5 x 6 mm) for Pin 1 higher power density. G1 D1 D1 D1 Features S1 / S2 Common Source Configuration to Eliminate PCB Routing D2 D2 Large Source Pad on Bottom of Package for Enhanced Thermals D2 G2 Max r = 1.0 m at V = 10 V, I = 38 A DS(on) GS D PQFN8 5X6, 1.27P Max r = 1.3 m at V = 4.5 V, I = 33 A DS(on) GS D CASE 483AS Ideal for Flexible Layout in Secondary Side Synchronous Rectification MARKING DIAGRAM 100% UIL Tested This Device is PbFree and is RoHS Compliant Y&Z&3&K Applications FDMD Isolated DCDC Synchronous Rectifiers 8630 Common Ground Load Switches &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDMD8630 = Specific Device Code PIN CONFIGURATION G1 1 8 D2 D2 D1 2 7 D2 D1 3 6 G2 D1 4 5 S1,S2to backside ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 2 FDMS3604S/DFDMD8630 MOSFET MAXIMUM RATINGS T = 25C Unless Otherwise Noted A Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage 20 V I A Drain Current D Continuous T = 25C (Note 5) 167 C 106 Continuous T =100C (Note 5) C Continuous T = 25C (Note 1a) 38 A 1178 Pulsed (Note 4) EAS Single Pulse Avalanche Energy (Note 3) 726 mJ W Power Dissipation for Single Operation T = 25 C 43 C P D Power Dissipation for Single Operation T = 25 C (Note 1a) 2.3 A TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 C THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RJC Thermal Resistance, Junction to Case 2.9 C/W RJA Thermal Resistance, Junction to Ambient (Note 1a) 55 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDMD8630 FDMD8630 Power 5 x 6 13 12 mm 3000 Units ELECTRICAL CHARACTERISTICS T = 25C Unless Otherwise Noted J Parameter Min Typ Max Units Symbol Test Conditions OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 30 V DSS D GS Breakdown Voltage Temperature 15 mV/C BV / I = 250 A, referenced to 25C DSS D Coefficient T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current, V = 20 V, V = 0 V 100 nA GSS GS DS Forward ON CHARACTERISTICS V Gate to Source Threshold Voltage 1.0 1.6 3.0 V V = V , I = 250 A GS(th) GS DS D V / Gate to Source Threshold Voltage I = 250 A, referenced to 25C 6 mV/C GS(th) D Temperature Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 38 A 0.6 1.0 m DS(on) GS D V = 4.5 V, I = 33 A 0.8 1.3 GS D V = 4.5 V, I = 33 A, T = 125C 0.9 1.5 GS D J g Forward Transconductance V = 5 V, I = 38 A 281 S FS DD D DYNAMIC CHARACTERISTICS C Input Capacitance V = 15 V, V = 0 V, f = 1 MHz 7090 9930 pF DS GS iss C Output Capacitance 2025 2835 pF oss C Reverse Transfer Capacitance 212 300 pF rss R Gate Resistance 0.1 1.9 3.8 g SWITCHING CHARACTERISTICS www.onsemi.com 2