Green
DMNH4006SK3Q
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Max
D Rated to +175C Ideal for High Ambient Temperature
BV R Max
DSS DS(ON)
T = +25C
C
Environments
40V 6m @ V = 10V 140A
GS 100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low Qg Minimizes Switching Loss
Description and Applications
Low R Minimizes On State Loss
DS(ON)
This MOSFET is designed to meet the stringent requirements of
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Automotive applications. It is qualified to AEC-Q101, supported by a
Halogen and Antimony Free. Green Device (Note 3)
PPAP and is ideal for use in:
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Engine Management Systems
Mechanical Data
Body Control Electronics
Case: TO252 (DPAK)
DC-DC Converters
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.315 grams (Approximate)
Equivalent Circuit
Top View
Pin Out Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMNH4006SK3Q-13 TO252 (DPAK) 2500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH4006SK3Q
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 20
A
I A
Continuous Drain Current , V = 10V (Note 7) D
GS
16
T = +70C
A
T = +25C 140
C
A
Continuous Drain Current , V = 10V (Note 8) I
GS D
100
T = +100C
C
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 200 A
DM
Maximum Continuous Body Diode Forward Current (Note 8) I 120 A
S
Avalanche Current, L = 0.1mH (Note 9) I 64 A
AS
Avalanche Energy, L = 0.1mH (Note 9) E 208 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 2.2 W
P
D
Steady State 68
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s 29
Total Power Dissipation (Note 7) 3.6 W
P
D
Steady State 42
Thermal Resistance, Junction to Ambient (Note 7) R
JA
t<10s 21
C/W
Thermal Resistance, Junction to Case (Note 8) 0.8
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current, T = +25C I 1 A V = 40V, V = 0V
J DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage 2 4 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 6 m
R V = 10V, I = 86A
DS(ON) GS D
Diode Forward Voltage 0.7 1.2 V
V V = 0V, I = 1.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance pF
C 2280
iss
V = 25V, V = 0V,
DS GS
Output Capacitance pF
C 556
oss
f = 1MHz
Reverse Transfer Capacitance C 282 pF
rss
Gate Resistance R 1.7 V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge (V = 6V) Q 32 nC
GS g
Total Gate Charge (V = 10V) Q 51 nC
GS g
V = 32V, I = 86A
DS D
Gate-Source Charge Q 9.6 nC
gs
Gate-Drain Charge Q nC
gd 20.4
Turn-On Delay Time ns
t 7.7
D(ON)
Turn-On Rise Time ns
t 9.3 V = 10V, V = 20V,
R GS DS
Turn-Off Delay Time ns R = 3.5, I = 86A
t 18 g D
D(OFF)
Turn-Off Fall Time ns
t 8.1
F
Body Diode Reverse Recovery Time t ns I = 50A, di/dt = 100A/s
RR 32 F
Body Diode Reverse Recovery Charge Q nC I = 50A, di/dt = 100A/s
RR 28 F
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
2 of 7
DMNH4006SK3Q April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38321 Rev. 1 - 2