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FDMS8050ET30 N-Channel PowerTrench MOSFET January 2015 FDMS8050ET30 N-Channel PowerTrench MOSFET 30 V, 423 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Extended T rating to 175C J improve the overall efficiency and to minimize switch node Max r = 0.65 m at V = 10 V, I = 55 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized Max r = 0.9 m at V = 4.5 V, I = 47 A DS(on) GS D for low gate charge and extremely low r . DS(on) Advanced Package and Silicon combination for low r DS(on) and high efficiency Applications MSL1 robust package design OringFET 100% UIL tested Synchronous Rectifier RoHS Compliant Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous T = 25 C (Note 6) 423 C -Continuous T = 100 C (Note 6) 299 C I A D -Continuous T = 25 C (Note 1a) 55 A -Pulsed (Note 5) 1914 E Single Pulse Avalanche Energy (Note 3) 1536 mJ AS Power Dissipation T = 25 C 180 C P W D Power Dissipation T = 25 C (Note 1a) 3.3 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 0.83 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8050ET FDMS8050ET30 Power 56 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8050ET30 Rev 1.0