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FDMS86103L N-Channel Shielded Gate PowerTrench MOSFET September 2015 FDMS86103L N-Channel Shielded Gate PowerTrench MOSFET 100 V, 81 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductors advanced PowerTrench process that Max r = 8 m at V = 10 V, I = 12 A DS(on) GS D incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior Max r = 11 m at V = 4.5 V, I = 10 A DS(on) GS D switching performance. Advanced Package and Silicon combination for low r DS(on) and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion RoHS Compliant Top Bottom Pin 1 S S D S S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 81 C Drain Current -Continuous T = 100 C (Note 5) 51 C I A D -Continuous T = 25 C 12 A -Pulsed (Note 4) 414 E Single Pulse Avalanche Energy (Note 3) 312 mJ AS Power Dissipation T = 25 C 104 C P W D Power Dissipation T = 25 C 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86103L FDMS86103L Power 56 13 12 mm 3000 units 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86103L Rev.1.5