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FDMS86310 N-Channel PowerTrench MOSFET October 2014 FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 m Features General Description Max r = 4.8 m at V = 10 V, I = 17 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 6.7 m at V = 8 V, I = 14 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized DS(on) for low gate charge, low r , fast switching speed and body and high efficiency DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Primary Switch 100% UIL tested Synchronous Rectifier RoHS Compliant Motor Switch Bottom Top Pin 1 S D S S S D G S Pin 1 D S D D D G D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25 C 50 C -Continuous (Silicon limited) T = 25 C 105 C I A D -Continuous T = 25 C (Note 1a) 17 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 183 mJ AS Power Dissipation T = 25 C 96 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86310 FDMS86310 Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86310 Rev. C1