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This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDP75N08A N-Channel UniFET MOSFET December 2013 FDP75N08A TM N-Channel UniFET MOSFET 75 V, 75 A, 1 1 m Features Description TM 75 A, 75 V, R = 11 m V = 10 V UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS Low Gate Charge (Typ. 145 nC) MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 86 pF) This MOSFET is tailored to reduce on-state resistance, and to Fast Switching provide better switching performance and higher avalanche energy strength. This device family is suitable for switching Improved dv/dt Capability power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FDP75N08A Unit V Drain-Source Voltage 75 V DSS I Drain Current - Continuous (T = 25C) 75 A D C - Continuous (T = 100C) 47 A C (Note 1) I Drain Current - Pulsed 300 A DM V Gate-Source Voltage 20 V GSS (Note 2) E Single Pulsed Avalanche Energy 1738 mJ AS (Note 1) I Avalanche Current 75 A AR (Note 1) E Repetitive Avalanche Energy 13.7 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 137 W D C - Derate Above 25C 1.09 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP75N08A Unit R Thermal Resistance, Junction-to-Case, Max. 0.91 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP75N08A Rev. C0