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V = 10 V, I = 3.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche Low C (Typ. 9 pF) rss energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. ALCD/LED TV Lighting Uninterruptible Power Supply AC-DC Power Supplypplications D G G D TO-220 S S Absolute Maximum Ratings Symbol Parameter FDP7N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25 C) 7 A D C - Continuous (T = 100 C) 4.2 A C (Note 1) I Drain Current - Pulsed 28 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 270 mJ AS I Avalanche Current (Note 1) 7 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25 C) 89 W D C - Derate above 25C 0.71 W/ C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP7N50 Unit R Thermal Resistance, Junction-to-Case, Max. 1.4 JC R 0.5 CS Thermal Resistance, Case-to-Sink, Typ. C/W 62.5 R Thermal Resistance, Junction-to-Ambient, Max. JA 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP7N50 Rev. C0