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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDPF33N25T N-Channel UniFET MOSFET August 2014 FDPF33N25T TM N-Channel UniFET MOSFET 250 V, 33 A, 94 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 94 m (Max.) V = 10 V, I = 16.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 39 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G G TO-220F D S S TO-220F LG-formed S Absolute Maximum Ratings T = 25C unless otherwise noted. C FDPF33N25T Symbol Parameter FDPF33N25TRDTU Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 33* A D C - Continuous (T = 100C) 20.4* A C (Note 1) I Drain Current - Pulsed A DM 132* V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 918 mJ AS (Note 1) I Avalanche Current 33 A AR (Note 1) E Repetitive Avalanche Energy 23.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 37 W D C - Derate Above 25C 0.29 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics FDPF33N25T Symbol Parameter FDPF33N25TRDTU Unit R Thermal Resistance, Junction-to-Case, Max. 3.4 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF33N25T Rev. C2