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V = 10 V, I = 5.9 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance. Low Gate Charge High Performance Trench Technology for Extremely Low Applications R DS(on) Consumer Appliances High Power and Current Handling Capability LCD/LED/PDP TV RoHS Compliant Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF3860T Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 20 C I Drain Current A D o - Continuous (T = 100 C) 12.7 C I Drain Current - Pulsed (Note 1) 80 A DM E Single Pulsed Avalanche Energy (Note 2) 278 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 3.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns o (T = 25 C) 33.8 W C P Power Dissipation D o o - Derate Above 25C0.27W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDPF3860T Unit R Thermal Resistance, Junction to Case, Max. 3.7 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF3860T Rev. C5