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V = 10 V, I = 1.9 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 3.7 pF) rss on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Tested vides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode Improved dv/dt Capability allows UniFET II MOSFET to withstand over 2kV HBM surge ESD Improved Capability stress. This device family is suitable for switching power con- RoHS Compliant verter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Applications lasts. Consumer Appliances Lighting Uninterruptible Power Supply AC-DC Power Supply D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF4N60NZ Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 3.8* C I Drain Current A D o - Continuous (T = 100 C) 2.3* C I Drain Current - Pulsed (Note 1) 15* A DM E Single Pulsed Avalanche Energy (Note 2) 223.8 mJ AS I Avalanche Current (Note 1) 3.8 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 28 W C P Power Dissipation D o o - Derate Above 25C0.22W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FDPF4N60NZ R Thermal Resistance, Junction to Case, Max. 4.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF4N60NZ Rev. C1