FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description 10 A, 30 V. R = 13.5 m V = 10 V This N-Channel Logic Level MOSFET is produced using Fair- DS(ON) GS R = 20 m V = 4.5 V child Semiconductors advanced PowerTrench process that has DS(ON) GS been especially tailored to minimize the on-state resistance and Fast switching speed yet maintain superior switching performance. Low gate charge These devices are well suited for low voltage and battery High performance trench technology for extremely low powered applications where low in-line power loss and fast R DS(ON) switching are required. High power and current handling capability D 5 4 D D 6 3 D 7 2 G S SO-8 S 8 1 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter Ratings Units V DrainSource Voltage 30 V DSS V GateSource Voltage 20 V GSS I Drain Current Continuous (Note 1a) 10 A D Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W JA (Note 1b) 125 R Thermal Resistance, Junction-to-Case (Note 1) 25 JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4410A FDS4410A 13 12mm 2500 units 1 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com FDS4410A Rev. B FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 30 V DSS GS D BVDSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C25 mV/C D T Coefcient J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS V = 24 V, V = 0 V, T = 55C 10 DS GS J I GateBody Leakage V = 20 V, V = 0 V 100 nA GSS GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.9 3 V GS(th) DS GS D VGS(th) Gate Threshold Voltage I = 250 A, Referenced to 25C5 mV/C D T Temperature Coefcient J R Static DrainSource OnResistance V = 10 V, I = 10 A 9.8 13.5 m DS(on) GS D V = 4.5 V, I = 9 A 12.0 20 GS D V = 10 V, I = 10 A, T = 125C 13.7 23 GS D J I OnState Drain Current V = 10 V, V = 5 V 50 A D(on) GS DS g Forward Transconductance V = 5 V, I = 10 A 48 S FS DS D Dynamic Characteristics C Input Capacitance V = 15 V, V = 0 V, f = 1.0 MHz 1205 pF iss DS GS C Output Capacitance 290 pF oss C Reverse Transfer Capacitance 115 pF rss R Gate Resistance V = 15 mV, f = 1.0 MHz 2.4 G GS Switching Characteristics (Note 2) t TurnOn Delay Time V = 15 V, I = 1 A, V = 10 V, 919 ns d(on) DS D GS R = 6 GEN t TurnOn Rise Time 510 ns r t TurnOff Delay Time 28 44 ns d(off) t TurnOff Fall Time 919 ns f Q Total Gate Charge V = 15 V, I = 10 A, V = 5 V 12 16 nC g DD D GS Q GateSource Charge 3.4 nC gs Q GateDrain Charge 4.0 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 2.1 A S V DrainSource Diode Forward Voltage V = 0 V, I = 2.1 A (Note 2) 0.74 1.2 V SD GS S t Diode Reverse Recovery Time I = 10A, d /d = 100 A/s 24 nS rr F iF t Q Diode Reverse Recovery Charge 27 nC rr Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is dened as the solder mounting surface of the drain pins. JA R is guaranteed by design while R is determined by the user s board design. JC CA a) 50C/W when mounted on a b) 125C/W when mounted on 2 1 in pad of 2 oz copper a minimum pad. Scale 1 : 1 on letter size paper 2. Test: Pulse Width < 300s, Duty Cycle < 2.0% 2 www.fairchildsemi.com FDS4410A Rev. B