FDS6680A ON Semiconductor

FDS6680A electronic component of ON Semiconductor
FDS6680A ON Semiconductor
FDS6680A MOSFETs
FDS6680A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDS6680A MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDS6680A MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.FDS6680A
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Datasheet:FDS6680A Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
258: USD 1.0109 ea
Line Total: USD 260.81 
Availability : 1115
  
Ship by Wed. 24 Jun to Tue. 30 Jun
QtyUnit Price
258$ 1.0109
260$ 1.0007
379$ 0.6868
383$ 0.6799
500$ 0.5361
1000$ 0.4591
  

Availability1115
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 175
Multiples : 1
QtyUnit Price
175$ 1.4864
258$ 1.0109
260$ 1.0007
379$ 0.6868
383$ 0.6799
500$ 0.5361
1000$ 0.4591


Availability1256
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.61
5$ 1.3188
10$ 1.1802
25$ 1.0192
27$ 0.7154


Availability179
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.884
10$ 1.5998
30$ 0.9829
100$ 0.888
500$ 0.8306
1000$ 0.8009


Availability1115
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 258
Multiples : 1
QtyUnit Price
258$ 1.0109
260$ 1.0007
379$ 0.6868
383$ 0.6799
500$ 0.5361
1000$ 0.4591

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Smd Marking
Termination Type
Voltage Vds
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Min
Kind Of Package
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We are delighted to provide the FDS6680A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS6680A and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS6680A FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V R = 9.5 m V = 10 V DS(ON) GS This N-Channel Logic Level MOSFET is produced using ON Semiconductors advanced Power R = 13 m V = 4.5 V DS(ON) GS Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate charge superior switching performance. High performance trench technology for extremely These devices are well suited for low voltage and low R battery powered applications where low in-line power DS(ON) loss and fast switching are required. High power and current handling capability DD 5 4 DD DD 6 3 DD 7 2 SO-8 G G 8 1 S S S S S SO-8 Pin 1 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 GSS I Drain Current Continuous (Note 1a) 12.5 A D Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1a) 50 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 25 JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13 12mm 2500 units 2012 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 6 FDS6680A/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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