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FDS86140 N-Channel PowerTrench MOSFET March 2011 FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 m Features General Description Max r = 9.8 m at V = 10 V, I = 11.2 A DS(on) GS D This N-Channel MOSFET is produced using Fairchild Max r = 16 m at V = 6 V, I = 9 A Semiconductors advanced Power Trench process that has DS(on) GS D been optimized for r , switching performance and DS(on) High performance trench technologh for extremely low r DS(on) ruggedness. High power and current handing capability in a widely used surface mount package Applications 100% UIL Tested DC/DC Converters and Off-Line UPS RoHS Compliant Distributed Power Architectures and VRMs Primary Swith for 24 V and 48 V Systems High Voltage Synchronous Rectifier D D G 5 4 D D D 6 3 S D D 7 2 S G SO-8 S 8 1 D S S Pin 1 S MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous 11.2 I A D -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 264 mJ AS Power Dissipation T = 25 C (Note 1) 5.0 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86140 FDS86140 SO-8 13 12 mm 2500 units 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDS86140 Rev.C